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hexfet ? power mosfet 08/24/11 AUIRF7379Q www.irf.com 1 so-8 n-ch p-ch v (br)dss 30v -30v r ds(on) typ. 0.038 0.070 max. 0.045 0.090 i d 5.8a -4.3a gds gate drain source
features advanced planar technology low on-resistance dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature automotive [q101] qualified lead-free , rohs compliant specifically designed for automotive applications, these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. automotive mosfet hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 units n-channel p-channel v ds drain-source voltage 30 -30 v i d @ t a = 25c continuous drain current, v gs @ 10v 5.8 -4.3 i d @ t a = 70c continuous drain current, v gs @ 10v 4.6 -3.4 i dm pulsed drain current 46 -34 p d @t a = 25c power dissipation linear derating factor v gs gate-to-source voltage v dv/dt peak diode recovery dv/dt 5.0 -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 50 c/w parameter 2.5 0.02 max. w a c 20 -55 to + 150

2 www.irf.com notes through are on page 10 static electrical characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units n-ch 30 ??? ??? p-ch -30 ??? ??? n-ch ??? 0.032 ??? p-ch ??? -0.037 ??? ??? 0.038 0.045 ??? 0.055 0.075 ??? 0.070 0.090 ??? 0.130 0.180 n-ch 1.0 ??? 3.0 p-ch -1.0 ??? -3.0 n-ch 5.2 ??? ??? p-ch 2.5 ??? ??? n-ch ??? ??? 1.0 p-ch ??? ??? -1.0 n-ch ??? ??? 25 p-ch ??? ??? -25 i gss gate-to-source forward leakage ??? ??? 100 dynamic electrical characteristics @ tj = 25c (unless otherwise stated) parameter min. typ. max. units n-ch ??? ??? 25 p-ch ??? ??? 25 n-ch ??? ??? 2.9 p-ch ??? ??? 2.9 n-ch ??? ??? 7.9 i d = -1.8a v ds = -24v, v gs =-10v p-ch ??? ??? 9.0 n-ch ??? 6.8 ??? p-ch ??? 11 ??? n-ch ??? 21 ??? p-ch ??? 17 ??? n-ch ??? 22 ??? p-ch ??? 25 ??? n-ch ??? 7.7 ??? p-ch ??? 18 ??? l d internal drain inductance n-p ??? 4.0 ??? between lead, 6mm (0.25in.) from package l s internal source inductance n-p ??? 6.0 ??? and center of die contact n-ch ??? 520 ??? p-ch ??? 440 n-ch ??? 180 ??? p-ch ??? 200 n-ch ??? 72 ??? vgs = 0v, v ds = -25v, f =1.0mhz p-ch ??? 93 diode characteristics parameter min. typ. max. units i s continuous source current n-ch ??? ??? 3.1 (body diode) p-ch ??? ??? -3.1 i sm pulsed source current n-ch ??? ??? 46 (body diode) p-ch ??? ??? -34 n-ch ??? 1.0 p-ch ??? -1.0 n-ch ??? 47 71 p-ch ??? 53 80 n-ch ??? 56 84 p-ch ??? 66 99 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 5.8a v gs = 0v, i d = -250 a reference to 25c, i d = -1ma s t j = 25c, i s = 1.8a, v gs = 0v n-channel p-channel v ds = 24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c v sd t rr q rr diode forward voltage reverse recovery time reverse recovery charge v gs = 20v conditions nc n-channel r d = 6.2 v dd = -15v, id=-1.8a, rg = 6.0 conditions v (br)dss drain-to-source breakdown voltage v (br)dss / t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance n-ch p-ch v gs(th) gate threshold voltage gfs forward transconductance drain-to-source leakage current i dss q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) t r t d(off) t f fall time turn-on delay time rise time turn-off delay time c iss c oss c rss input capacitance output capacitance reverse transfer capacitance pf a n-channel nc t j = 25c, i f = 2.4a di/dt = 100a/ s t j = 25c, i f = -1.8a di/dt = 100a/ s t j = 25c, i s = -1.8a, v gs = 0v v vgs = 0v, v ds = 25v, f =1.0mhz p-channel ns v dd = 15v, id=2.4a, rg = 6.0 p-channel r d = 8.2 v ns v ds = v gs , i d = -250 a v v/c v ds = v gs , i d = 250 a v gs = 4.5v, i d = 4.9a v gs = -10v, i d = -4.3a v gs = -4.5v, i d = -3.7a nh v ds = -24v, i d = -1.8a v ds = -24v, v gs = 0v v ds = 15v, i d = 2.4a a na i d = 2.4a v ds = 24v, v gs =10v p-channel v ds = 24v, v gs = 0v, t j = 125c n-channel

www.irf.com 3 qualification information ? so-8 msl1 n ch: class m2(+/- 150v ) ??? p ch: class m2(+/- 150v ) ??? n ch : class h1a(+/- 500v ) ??? p ch: class h0(+/- 250v ) ??? n ch: class c5(+/- 2000v ) ??? p ch: class c5(+/- 2000v ) ??? (per aec-q101-001) charged device model (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model (per aec-q101-002) human body model qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage

4 www.irf.com fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c a 4.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 150c a 4.5v j 10 100 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 15v 20 s pulse width ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a

www.irf.com 5 fig 5. normalized on-resistance vs. temperature fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 4.0a d 0 4 8 12 16 0.03 0.04 0.05 0.06 0.07 0.08 r , drain-to-source on resistance v , gate-to-source voltage (v) gs ds (on) id = 5.8a 2 4 6 8 10 0.00 0.04 0.08 0.12 0.16 0.20 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v

6 www.irf.com fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. typical gate charge vs. gate-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a i = 2.4a v = 24v d ds for test circuit see figure 11

www.irf.com 7 fig 13. typical transfer characteristics fig 12. typical output characteristics fig 11. typical output characteristics fig 14. typical source-drain diode forward voltage
1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse width t = 25c j 1 10 100 0.1 1 10 100 d ds 20 s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v j 1 10 100 45678910 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20 s pulse width ds 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v)

8 www.irf.com fig 15. normalized on-resistance vs. temperature fig 16. typical on-resistance vs. drain current fig 17. typical on-resistance vs. gate voltage
0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -3.0a d 0 2 4 6 8 10 12 14 0.00 0.10 0.20 0.30 0.40 0.50 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v 0 4 8 12 16 0.06 0.08 0.10 0.12 0.14 0.16 r , drain-to-source on resistance -v , gate-to-source voltage (v) gs ds (on) id = -4.3a

www.irf.com 9 fig 19. typical gate charge vs. gate-to-source voltage fig 18. typical capacitance vs. drain-to-source voltage
fig 20. maximum effective transient thermal impedance, junction-to-ambient 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g a -v , gate-to-source voltage (v) gs i = -3.0a v = -24v ds d for test circuit see figure 22

10 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070]

www.irf.com 11 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 ) n-channel i sd 2.4a, di/dt 73a/ s, v dd v (br)dss , t j 150c p-channel i sd -1.8a, di/dt 90a/ s, v dd v (br)dss , t j 150c pulse width 300 s; duty cycle 2% surface mounted on fr-4 board, 10sec. notes:

12 www.irf.com ordering information base part package type standard pack complete part number form quantity AUIRF7379Q so-8 tube 95 AUIRF7379Q tape and reel 4000 AUIRF7379Qtr

www.irf.com 13
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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